PART |
Description |
Maker |
KMM5364005CSWG |
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
KMM5364003CSW KMM5364003CSWG |
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
KMM5364005CSW KMM5364005CSWG |
4M X 36 DRAM SIMM USING 4MX16 & QUAD CAS 4MX4, 4K REFRESH, 5V 4MB X 36 DRAM Simm Using 4MB X 16 & Quad Cas 4MB X 4
|
SAMSUNG[Samsung semiconductor]
|
KMM5322200C2WG KMM5322200C2W |
2M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
KMM5324104CKG KMM5324104CK KMM5324004CK KMM5324004 |
4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
KMM5362000B2 KMM5362000B2G |
2M x 36 DRAM SIMM Memory Module
|
Samsung Electronics
|
KMM5322104CKUG KMM5322104CKU |
2M x 32 DRAM SIMM using 2Mx8 , 2K Refresh, 5V
|
Samsung semiconductor
|
KMM5322204C2W |
2MBx32 DRAM Simm Using 1MBx16
|
Samsung Semiconductor
|
KMM5362003 KMM5362003G |
2M x 36 DRAM SIMM Memory Module
|
Samsung Electronics
|